npn silicon transistors . . . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wideband amplifiers and power oscillators in industrial and commercial applications. ? high speed t f = 0.5 m s (max) ? high current i c(max) = 30 amps ? low saturation v ce(sat) = 2.5 v (max) @ i c = 20 amps ????????????????????????????????? ????????????????????????????????? *maximum ratings ???????????????? ???????????????? rating ?????? ?????? symbol ?????????? ?????????? value ???? ???? unit ???????????????? ???????????????? collectorbase voltage ?????? ?????? v cbo ?????????? ?????????? 150 ???? ???? vdc ???????????????? ???????????????? collectoremitter voltage ?????? ?????? v cev ?????????? ?????????? 150 ???? ???? vdc ???????????????? ???????????????? emitterbase voltage ?????? ?????? v ebo ?????????? ?????????? 7 ???? ???? vdc ???????????????? ? ?????????????? ? ???????????????? collector current continuous peak (1) ?????? ? ???? ? ?????? i c i cm ?????????? ? ???????? ? ?????????? 20 30 ???? ? ?? ? ???? adc ???????????????? ???????????????? base current continuous ?????? ?????? i b ?????????? ?????????? 5 ???? ???? adc ???????????????? ? ?????????????? ? ???????????????? total device dissipation @ t c = 25 c derate above 25 c ?????? ? ???? ? ?????? p d ?????????? ? ???????? ? ?????????? 140 0.8 ???? ? ?? ? ???? watts w/ c ???????????????? ???????????????? operating and storage junction temperature range ?????? ?????? t j , t stg ?????????? ?????????? 65 to +200 ???? ???? c ????????????????????????????????? ????????????????????????????????? thermal characteristics ????????????????? ????????????????? characteristic ??????? ??????? symbol ???????? ???????? max ???? ???? unit ????????????????? ????????????????? thermal resistance, junction to case ??????? ??????? r q jc ???????? ???????? 1.25 ???? ???? c/w *indicates jedec registered data. (1) pulse test: pulse width 10 ms, duty cycle 50%. figure 1. switching time test circuit 0 +11 v 10 w -5 v 1n4933 v cc r c 2.5 i c = 12 amps i b1 = i b2 = 1.2 amps -9 v 2n5038 +30 v pw = 20 m s duty cycle = 1% i c = 10 amps i b1 = i b2 = 1.0 amps 2n5039 on semiconductor ? semiconductor components industries, llc, 2001 may, 2001 rev. 10 1 publication order number: 2n5038/d 2n5038 20 ampere npn silicon power transistor 90 volts 140 watts case 107 to204aa (to3)
2n5038 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? *electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (2) (i c = 200 madc, i b = 0) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 90 ???? ? ?? ? ???? ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 140 vdc, v be(off) = 1.5 v) (v ce = 100 vdc, v be(off) = 1.5 vdc, t c = 150 c) ????? ? ??? ? ? ??? ? ????? i cex ??? ? ? ? ? ? ? ??? ???? ? ?? ? ? ?? ? ???? 50 10 ??? ? ? ? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ?????????????????????? emitter cutoff current (v eb = 5 vdc, i c = 0) (v eb = 7 vdc, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? ???? ? ?? ? ???? 5 50 ??? ? ? ? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics (2) ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 12 adc, v ce = 5 vdc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 20 ???? ? ?? ? ???? 100 ??? ? ? ? ??? ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 20 adc, i b = 5 adc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? ???? ? ?? ? ???? 2.5 ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? baseemitter saturation voltage (i c = 20 adc, i b = 5 adc) ????? ????? v be(sat) ??? ??? ???? ???? 3.3 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? magnitude of commonemitter smallsignal shortcircuit forward current transfer ratio (i c = 2 adc, v ce = 10 vdc, f = 5 mhz) ????? ? ??? ? ? ??? ? ????? |h fe | ??? ? ? ? ? ? ? ??? 12 ???? ? ?? ? ? ?? ? ???? ??? ? ? ? ? ? ? ??? ????????????????????????????????? switching characteristics ????????????????????????????????? ????????????????????????????????? resistive load ??????? ??????? rise time ???????????????? ???????????????? (v cc = 30 vdc) ????? ????? t r ??? ??? ???? ???? 0.5 ??? ??? m s ??????? ??????? storage time ???????????????? ???????????????? (i c = 12 adc, i b1 = i b2 = 1.2 adc) ????? ????? t s ??? ??? ???? ???? 1.5 ??? ??? m s *indicates jedec registered data. (2) pulse test: pulse width 300, m s, duty cycle 2%. 100 figure 2. forward bias safe operating area v ce , collector-emitter voltage (volts) 5 2 0.1 1 10 100 bonding wire limit thermal limit second breakdown limit 70 1 i c , collector current (amps) dc 50 20 10 0.5 0.2 2 3 5 7 20 30 50 t c = 25 c there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. second breakdown pulse limits are valid for duty cycles to 10%. at high case temperatures, thermal limitations may reduce the power that can be handled to values less than the limitations imposed by second breakdown.
2n5038 http://onsemi.com 3 package dimensions case 107 to204aa (to3) issue z notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with referenced to-204aa outline shall apply. dim min max min max millimeters inches a 1.550 ref 39.37 ref b --- 1.050 --- 26.67 c 0.250 0.335 6.35 8.51 d 0.038 0.043 0.97 1.09 e 0.055 0.070 1.40 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n --- 0.830 --- 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k t seating plane 2 pl d m q m 0.13 (0.005) y m t m y m 0.13 (0.005) t q y 2 1 u l g b v h
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